? semiconductor components industries, llc, 2010 july, 2010 ? rev. 9 1 publication order number: mmbt4403lt1/d mmbt4403lt1g switching transistor pnp silicon features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo ? 40 vdc collector ? base voltage v cbo ? 40 vdc emitter ? base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 600 madc collector current ? peak i cm ? 900 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) @t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) @t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *transient pulses must not cause the junction temperature to be exceeded. 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. sot ? 23 (to ? 236) case 318 style 6 http://onsemi.com 1 2 3 collector 3 1 base 2 emitter http://onsemi.com device package shipping ? ordering information mmbt4403lt1g sot ? 23 (pb ? free) 3000 tape & reel MMBT4403LT3G sot ? 23 (pb ? free) 10,000 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. *date code orientation and/or overbar may vary depending upon manufacturing location. 1 2t m 2t = specific device code m = date code* = pb ? free package (note: microdot may be in either location) marking diagram
mmbt4403lt1g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 3) (i c = ? 1.0 madc, i b = 0) v (br)ceo ? 40 ? vdc collector ? base breakdown voltage (i c = ? 0.1 madc, i e = 0) v (br)cbo ? 40 ? vdc emitter ? base breakdown voltage (i e = ? 0.1 madc, i c = 0) v (br)ebo ? 5.0 ? vdc base cutoff current (v ce = ? 35 vdc, v eb = ? 0.4 vdc) i bev ? ? 0.1 adc collector cutoff current (v ce = ? 35 vdc, v eb = ? 0.4 vdc) i cex ? ? 0.1 adc on characteristics dc current gain (i c = ? 0.1 madc, v ce = ? 1.0 vdc) (i c = ? 1.0 madc, v ce = ? 1.0 vdc) (i c = ? 10 madc, v ce = ? 1.0 vdc) (note 3) (i c = ? 150 madc, v ce = ? 2.0 vdc) (note 3) (i c = ? 500 madc, v ce = ? 2.0 vdc) h fe 30 60 100 100 20 ? ? ? 300 ? ? collector ? emitter saturation voltage (note 3) (i c = ? 150 madc, i b = ? 15 madc) (i c = ? 500 madc, i b = ? 50 madc) v ce(sat) ? ? ? 0.4 ? 0.75 vdc base ? emitter saturation voltage (note 3) (i c = ? 150 madc, i b = ? 15 madc) (i c = ? 500 madc, i b = ? 50 madc) v be(sat) ? 0.75 ? ? 0.95 ? 1.3 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = ? 20 madc, v ce = ? 10 vdc, f = 100 mhz) f t 200 ? mhz collector ? base capacitance (v cb = ? 10 vdc, i e = 0, f = 1.0 mhz) c cb ? 8.5 pf emitter ? base capacitance (v be = ? 0.5 vdc, i c = 0, f = 1.0 mhz) c eb ? 30 pf input impedance (i c = ? 1.0 madc, v ce = ? 10 vdc, f = 1.0 khz) h ie 1.5 15 k voltage feedback ratio (i c = ? 1.0 madc, v ce = ? 10 vdc, f = 1.0 khz) h re 0.1 8.0 x 10 ? 4 small ? signal current gain (i c = ? 1.0 madc, v ce = ? 10 vdc, f = 1.0 khz) h fe 60 500 ? output admittance (i c = ? 1.0 madc, v ce = ? 10 vdc, f = 1.0 khz) h oe 1.0 100 mhos switching characteristics delay time (v cc = ? 30 vdc, v eb = ? 2.0 vdc, i c = ? 150 madc, i b1 = ? 15 madc) t d ? 15 ns rise time t r ? 20 storage time (v cc = ? 30 vdc, i c = ? 150 madc, i b1 = i b2 = ? 15 madc) t s ? 225 ns fall time t f ? 30 3. pulse test: pulse width 300 s, duty cycle 2.0%. fi g ure 1. turn ? on time fi g ure 2. turn ? off time switching time equivalent test circuit scope rise time < 4.0 ns *total shunt capacitance of test jig connectors, and oscilloscope +2 v -16 v 10 to 100 s, duty cycle = 2% 0 1.0 k -30 v 200 c s * < 10 pf 1.0 k -30 v 200 c s * < 10 p +4.0 v < 2 ns 1.0 to 100 s, duty cycle = 2% < 20 ns +14 v 0 -16 v
mmbt4403lt1g http://onsemi.com 3 figure 3. charge data i c , collector current (ma) q, charge (nc) 2.0 3.0 5.0 7.0 10 1.0 10 20 50 70 100 200 0.1 300 500 0.7 0.5 v cc = 30 v i c /i b = 10 figure 4. turn ? on time i c , collector current (ma) 20 30 50 5.0 10 7.0 figure 5. rise time i c , collector current (ma) figure 6. storage time i c , collector current (ma) q t q a 25 c 100 c transient characteristics 0.3 0.2 30 t s , storage time (ns) t, time (ns) 70 100 10 20 50 70 100 200 300 500 30 i c /i b = 10 t r @ v cc = 30 v t r @ v cc = 10 v t d @ v be(off) = 2 v t d @ v be(off) = 0 20 30 50 5.0 10 7.0 70 100 10 20 50 70 100 200 300 500 30 v cc = 30 v i c /i b = 10 10 20 50 70 100 200 300 500 30 100 20 70 50 200 30 t r , rise time (ns) i c /i b = 10 i c /i b = 20 i b1 = i b2 t s = t s - 1/8 t f 6 8 10 0 4 2 0.1 2.0 5.0 10 20 50 1.0 0.5 0.2 0.01 0.02 0.05 100 figure 7. frequency effects f, frequency (khz) small ? signal characteristics noise figure v ce = ? 10 vdc, t a = 25 c; bandwidth = 1.0 hz nf, noise figure (db) i c = 1.0 ma, r s = 430 i c = 500 a, r s = 560 i c = 50 a, r s = 2.7 k i c = 100 a, r s = 1.6 k r s = optimum source resistance 50 100 200 500 1k 2k 5k 10k 20k 50k 6 8 10 0 4 2 nf, noise figure (db) figure 8. source resistance effects r s , source resistance (ohms) f = 1 khz i c = 50 a 100 a 500 a 1.0 ma
mmbt4403lt1g http://onsemi.com 4 h parameters v ce = 10 vdc, f = 1.0 khz, t a = 25 c this group of graphs illustrates the relationship between h fe and other ?h? parameters for this series of transistors. to obtain these curves, a high ? gain and a low ? gain unit were selected from the mmbt4403lt1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. h ie , input impedance (ohms) figure 9. input impedance i c , collector current (madc) 100k 100 20k 10k 5k 2k 1k 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 figure 10. voltage feedback ratio i c , collector current (madc) 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 0.1 20 figure 11. output admittance i c , collector current (madc) 500 1.0 5.0 7.0 50 20 10 5.0 2.0 5.0 2.0 1.0 0.5 0.2 h , output admittance ( mhos) oe h , voltage feedback ratio (x 10 ) re -4 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 50k 500 200 10 100 mmbt4403lt1 unit 1 mmbt4403lt1 unit 2 mmbt4403lt1 unit 1 mmbt4403lt1 unit 2 mmbt4403lt1 unit 1 mmbt4403lt1 unit 2
mmbt4403lt1g http://onsemi.com 5 static characteristics i c , collector current (a) 250 300 350 450 100 h , dc current gain 0.01 1 50 0.1 fe 0.001 0.0001 150 200 400 -55 c t j = 150 c 25 c figure 12. dc current gain i b , base current (ma) figure 13. collector saturation region 0.2 0.4 0.6 0.8 1.2 0.001 0 10 100 1.0 figure 14. collector ? emitter saturation voltage vs. collector current figure 15. temperature coefficients i c , collector current (ma) 0.5 0 0.5 1.0 1.5 2.0 vc for v ce(sat) vs for v be coefficient (mv/ c) 2.5 1.0 2.0 5.0 10 20 50 100 500 200 0.1 0.2 0.5 0.01 0.1 1 i c = 1.0 ma 10 ma 100 ma 500 ma v ce = 5.0 v v ce = 2.0 v v ce = 1.0 v i c , collector current (a) 0.15 0.20 0.30 0.35 0.05 vce(sat), collector-emitter saturation voltage (v) 0.01 0.1 0 1 150 c 0.0001 -55 c 0.001 25 c 0.10 0.25 i c /i b = 10 v , collector-emitter voltage (v) ce
mmbt4403lt1g http://onsemi.com 6 static characteristics figure 16. base ? emitter saturation voltage vs. collector current figure 17. base ? emitter turn on voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.3 0.4 0.5 0.6 0.7 0.9 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.2 0.4 0.5 0.6 0.7 0.9 1.0 v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter turn on voltage (v) 0.8 150 c 25 c ? 55 c 0.8 150 c 25 c ? 55 c i c /i b = 10 v ce = 2.0 v figure 18. input capacitance vs. emitter base voltage figure 19. output capacitance vs. collector base voltage v eb , emitter base voltage (v) v cb , collector base voltage (v) 6 3 2 1 0 10 15 20 25 35 40 40 20 15 5 0 3 7 9 13 15 c ibo , input capacitance (pf) c obo , output capacitance (pf) 30 4 5 10 25 30 35 0.3 11 5 figure 20. safe operating area figure 21. current ? gain ? bandwidth product v ce , collector emitter voltage (v) i c , collector current (ma) 100 10 1 0.001 0.01 1 10 0.1 10 1000 i c , collector current (a) f t , current ? gain ? bandwidth (mhz) 0.1 100 1 100 1000 10 msec 1 sec v ce = 1.0 v t a = 25 c
mmbt4403lt1g http://onsemi.com 7 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue an d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318 ? 01 thru ? 07 and ? 09 obsolete, new standard 318 ? 08. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 6: pin 1. base 2. emitter 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mmbt4403lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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